diff --git a/ports/stm32/flash.c b/ports/stm32/flash.c
index 10e1d2eff1..4042785fa2 100644
--- a/ports/stm32/flash.c
+++ b/ports/stm32/flash.c
@@ -68,15 +68,25 @@ static const flash_layout_t flash_layout[] = {
     { (uint32_t)FLASH_BASE, (uint32_t)FLASH_PAGE_SIZE, 512 },
 };
 
+#elif defined(STM32H7)
+
+static const flash_layout_t flash_layout[] = {
+    { 0x08000000, 0x20000, 8 },
+};
+
 #else
 #error Unsupported processor
 #endif
 
-#if defined(MCU_SERIES_L4)
+#if defined(MCU_SERIES_L4) || defined(STM32H7)
 
 // get the bank of a given flash address
 static uint32_t get_bank(uint32_t addr) {
+    #if defined(STM32H7)
+    if (READ_BIT(FLASH->OPTCR, FLASH_OPTCR_SWAP_BANK) == 0) {
+    #else
     if (READ_BIT(SYSCFG->MEMRMP, SYSCFG_MEMRMP_FB_MODE) == 0) {
+    #endif
         // no bank swap
         if (addr < (FLASH_BASE + FLASH_BANK_SIZE)) {
             return FLASH_BANK_1;
@@ -93,6 +103,7 @@ static uint32_t get_bank(uint32_t addr) {
     }
 }
 
+#if defined(MCU_SERIES_L4)
 // get the page of a given flash address
 static uint32_t get_page(uint32_t addr) {
     if (addr < (FLASH_BASE + FLASH_BANK_SIZE)) {
@@ -103,6 +114,7 @@ static uint32_t get_page(uint32_t addr) {
         return (addr - (FLASH_BASE + FLASH_BANK_SIZE)) / FLASH_PAGE_SIZE;
     }
 }
+#endif
 
 #endif
 
@@ -153,12 +165,19 @@ void flash_erase(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32)
     EraseInitStruct.NbPages     = get_page(flash_dest + 4 * num_word32 - 1) - EraseInitStruct.Page + 1;;
     #else
     // Clear pending flags (if any)
+    #if defined(STM32H7)
+    __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_ALL_ERRORS_BANK1 | FLASH_FLAG_ALL_ERRORS_BANK2);
+    #else
     __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
                            FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
+    #endif
 
     // erase the sector(s)
     EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
     EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
+    #if defined(STM32H7)
+    EraseInitStruct.Banks = get_bank(flash_dest);
+    #endif
     EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
     EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
     #endif
@@ -224,6 +243,19 @@ void flash_write(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32)
         }
     }
 
+    #elif defined(STM32H7)
+
+    // program the flash 256 bits at a time
+    for (int i = 0; i < num_word32 / 8; i++) {
+        if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, flash_dest, (uint64_t)(uint32_t)src) != HAL_OK) {
+            // error occurred during flash write
+            HAL_FLASH_Lock(); // lock the flash
+            return;
+        }
+        flash_dest += 32;
+        src += 8;
+    }
+
     #else
 
     // program the flash word by word
diff --git a/ports/stm32/flashbdev.c b/ports/stm32/flashbdev.c
index 49fe5c6964..ec2e4f212d 100644
--- a/ports/stm32/flashbdev.c
+++ b/ports/stm32/flashbdev.c
@@ -85,6 +85,14 @@ STATIC byte flash_cache_mem[0x4000] __attribute__((aligned(4))); // 16k
 #define FLASH_MEM_SEG1_START_ADDR (0x08008000) // sector 1
 #define FLASH_MEM_SEG1_NUM_BLOCKS (192) // sectors 1,2,3: 32k+32k+32=96k
 
+#elif defined(STM32H743xx)
+
+// The STM32H743 flash sectors are 128K
+#define CACHE_MEM_START_ADDR (0x20000000) // DTCM data RAM, 128k
+#define FLASH_SECTOR_SIZE_MAX (0x20000) // 128k max
+#define FLASH_MEM_SEG1_START_ADDR (0x08020000) // sector 1
+#define FLASH_MEM_SEG1_NUM_BLOCKS (256) // Sector 1: 128k / 512b = 256 blocks
+
 #elif defined(STM32L475xx) || defined(STM32L476xx)
 
 extern uint8_t _flash_fs_start;