Update README.md

hardware/README.md

@@ -23,7 +23,8 @@ The usage of LDOs provides high level of voltage isolation, low emitted noise, a
 The power distribution provides high frequency isolation of the RF components from the digital components (memory, RPI and FPGA) at frequencies lower than 10 MHz. Above 100 MHz additional isolation is provided by using ferrite beads with high impedance (>500 Ohms) at 100MHz. A set of filterring bypass capacitors have been chosen to further suppress noise generated by components on their power lines at mid-range frequencies (10 to 100 MHz) - the set contains 1nF, 100 nF and 4.7uF capacitors bypassing power and data lines effective at the said frequency ranges.
 
 ## RPI HAT EEPROM
-TBD
+An I2C EEPROM device is assembled on CaribouLite to support for the requirements of RPI HATs as described in [RPI HAT Requirements](https://github.com/raspberrypi/hats).
+For the first setup of the device, the write-protect pin of the EEPROM needs to be released (de-asserted). To do so, the USR-Switch needs to be pushed all along the programming period, and released as the operation completes.
 
 ## Clocking
 TBD